Electronics and Photonics |
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| Session 566 - Transport Phenomena In Electronic Materials Processing | |||
| Transport Phenomena in Electronic Materials Processing | |||
| Chair: | W. Robert Ashurst | ||
| CoChair: | Jeffrey J. Derby | ||
| 566a | Explanation for Benefits of Millisecond Annealing In Ultrashallow Junction Formation Edmund G. Seebauer, Charlotte T. M. Kwok |
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| 566b | The Combined Role of Transport Phenomena and Interfacial Attachment Kinetics during Liquid Phase Epitaxy of Mercury Cadmium Telluride Igal G. Rasin, Anne Ben Dov, Ilana Grimberg, Olga Klin, Eliezer Weiss, Simon Brandon |
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| 566c | First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon Kyoung E. Kweon, Gyeong S. Hwang |
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| 566d | Computational Insights into the (Complex) Aggregation Physics of Self-Interstitials Sumeet Kapur, Talid Sinno |
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| 566e | A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation In Crystalline Silicon Rubal Dua, Talid Sinno |
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| 566f | Optically Stimulated Diffusion In Ultrashallow Junction Formation Yevgeniy Kondratenko, Charlotte Kwok, Edmund G. Seebauer |
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| 566g | Morphological Stability Analysis of Planar Crystalline Solid Surfaces Under the Simultaneous Action of Electric Fields and Mechanical Stresses Vivek Tomar, M. Rauf Gungor, Dimitrios Maroudas |
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