Stephanie L. Teich-McGoldrick, University of Michigan, Dept. of Chemical Engineering, 2300 Hayward Street, Ann Arbor, MI 48109-2136, Mathieu Bellanger, INSA (Institut National des Sciences Appliquées de Toulouse), 135 Avenue de Rangueil, Toulouse Cedex 4, France, Matthieu Caussanel, Laboratoire ELIAUS (Ancien LP2A), Université de Perpignan Via Domitia, 52 av. Paul Alduy, Perpignan Cedex, France, Leonidas Tsetseris, Department of Physics, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece, Sokrates Pantelides, Department of Physics & Astronomy, Vanderbilt University, Stevenson Center 6301, P.O. Box 1807 Sta B 37235, Nashville, TN 37235, Sharon C. Glotzer, Chemical Engineering and Materials Science and Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, MI 48109, and Ron. D. Schrimpf, Department of Electrical Engineering and Computer Science, Vanderbilt University, Box 1608, Station B, Nashville, TN 37235.
Multiple simulation techniques are used to study the feasibility of using CdTe nanotetrapods as circuit elements. Technology Computer-Aided Design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over inter-particle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.