Silicon has been the dominant semiconducting material for the fabrication of mechanical and electronic elements of micro-/nanosystems. However, the materials properties of silicon impose limitations on its use in harsh environment and demanding applications (e.g., repetitive contact, high temperature, high humidity). Silicon carbide (SiC) is an alternative semiconducting material that enables such applications because of its wider bandgap and higher melting/sublimation temperature, elastic modulus, fracture toughness, hardness, chemical inertness, and thermal conductivity. In addition, many SiC surface properties are quite different from those of silicon. For example, SiC micromechanical devices are found to be much less susceptible to tribological challenges, which can be attributed to its outstanding nanomechanical properties. In this talk, we will highlight recent material, process, and characterization advances that are enabling SiC micro-/nanosystems for harsh environment and demanding applications.